CIRCUIT SIMULATION OF SINGLE FAILURES OF MEMORY MODULES OF ON–BOARD ELECTRONICS
Ключевые слова:
circuit simulation, critical charge, ionization current, on-board equipment.Аннотация
The main objective of the work is the circuit simulation of single failures of a cell of memory
modules under given conditions and parameters of transistors of a memory element during the passage of a single
particle.
The ionization current and critical charges are determined, which lead to a single failure and to the inversion of
the logical state of the memory module cell.
Application area. The results can be used in the design of microprocessor systems of on-board elecronics of
spacecraft.
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Опубликован
2020-06-08
Как цитировать
Grichshenko, V., & Mukushev, A. (2020). CIRCUIT SIMULATION OF SINGLE FAILURES OF MEMORY MODULES OF ON–BOARD ELECTRONICS. Известия НАН РК. Серия физико-математическая, (3), 118–126. извлечено от https://journals.nauka-nanrk.kz/physics-mathematics/article/view/472
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